A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile

A 100-V Taper-Shielded trench Gate (TSG) power metal-oxide-semiconductor field-effect transistor (MOSFET) with superior figure-of-merit (FOM) is proposed and investigated in this paper. The gate of the TSG-MOSFET has a tapered shape to reduce gate-to-drain overlap capacitance (CGD) charge (QG). vertical drift region doping profile enhanced two ways. First use multi-step epitaxial growth produce non-uniform profile. Second place lightly doped n-region at bottom. bulk electric field blocking state can be more evenly distributed, allowing shorter lower specific ON-resistance (RON,sp). Both technology computer-aided design (TCAD) simulations experiments were performed evaluate device. device exhibits an improved RON,sp 27 mΩ·mm2 breakdown voltage (BV) 105 V. third quadrant performance reverse recovery characteristics are also greatly improved. During conduction, amount excessive carriers stored reduced due shortened optimized (Qrr) decreased from 70 49 nC. When compared its state-of-the-art counterparts, measured [RON × QG] FOM Qrr showed reduction 23% 28%, respectively.